| Part No | FDS4435BZ |
| Manufacturer | Fairchild/ON Semiconductor |
| Catalog | Transistors – FETs, MOSFETs – RF |
| Description | MOSFET P-CH 30V 8.8A 8-SOIC |
| Datasheet | FDS4435BZ Datasheet |
The FDS4435BZ is a high popularity P-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It has a fake threat in the open market of 64% and a sufficient supply and demand status. This MOSFET has a power dissipation of 2.5W (Ta) and is commonly used in power management and consumer electronics.
| Categories | Discrete Semiconductor Products |
| Manufacturer | Fairchild/ON Semiconductor |
| Packaging | Reel – TR |
| Status | Active |
| Polarity | P-Channel |
| Technology | MOSFET |
| Drain-Source Breakdown Voltage | 30V |
| Continuous Drain Current at 25°C | 8.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Gate-Source Threshold Voltage | 3V @ 250μA |
| Max Gate Charge | 40nC @ 10V |
| Max Input Capacitance | 1845pF @ 15V |
| Maximum Gate-Source Voltage | ±25V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Maximum Rds On at Id,Vgs | 20 mOhm @ 8.8A, 10V |
| Temperature Range – Operating | -55°C to 150°C (TJ) |
| Mounting | SMD (SMT) |
| Case / Package | 8-SO |
| Dimension | 8-SOIC (0.154″, 3.90mm Width) |
| Is this a common-used part? | Yes |
| Popularity | High |
| Fake Threat In the Open Market | 64 pct. |
| Supply and Demand Status | Sufficient |
| Application Field | Used in Power Management, Consumer Electronics |
| Family Name | FDS4435BZ |
| Introduction Date | July 19, 2005 |
| ECCN | EAR99 |
| Country of Origin | China, Philippines |
| Halogen Free | Compliant |
| Estimated EOL Date | 2024 |
| Quantity per package | 2,500 |
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