Part No | STD35P6LLF6 |
Manufacturer | STMicroelectronics |
Catalog | Transistors – FETs, MOSFETs – RF |
Description | MOSFET P-CH 60V 35A DPAK |
Datasheet | STD35P6LLF6 Datasheet |
The STD35P6LLF6 is a cutting-edge P-channel MOSFET developed by STMicroelectronics, a leader in semiconductor solutions. This high-performance transistor is designed for advanced power management tasks and is well-suited for a variety of applications, including DC-DC converters, load switches, and power management in portable devices.
The STD35P6LLF6 is versatile and can be used in a wide array of applications such as:
STMicroelectronics ensures that the STD35P6LLF6 meets high standards of performance and reliability. The device is characterized by its robustness and long operational life, which is essential for industrial and consumer applications that demand consistent performance over time. Additionally, the MOSFET is RoHS compliant and adheres to the strictest environmental standards, reflecting STMicroelectronics’ commitment to environmental sustainability.
With its combination of efficiency, power handling, and compact size, the STD35P6LLF6 from STMicroelectronics stands out as a superior choice for designers looking to optimize their power management systems.
Categories | Discrete Semiconductor Products |
Manufacturer | STMicroelectronics |
Packaging | Reel – TR |
Status | Active |
Polarity | P-Channel |
Technology | MOSFET |
Drain-Source Breakdown Voltage | 60V |
Continuous Drain Current at 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Gate-Source Threshold Voltage | 2.5V @ 250μA |
Max Gate Charge | 30nC @ 4.5V |
Max Input Capacitance | 3780pF @ 25V |
Maximum Gate-Source Voltage | ±20V |
Power Dissipation (Max) | 70W (Tc) |
Maximum Rds On at Id,Vgs | 28 mOhm @ 17.5A, 10V |
Temperature Range – Operating | 175°C (TJ) |
Mounting | SMD (SMT) |
Case / Package | DPAK |
Dimension | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Fake Threat In the Open Market | 48 pct. |
Supply and Demand Status | Sufficient |
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