| Part No | 10N60 |
| Manufacturer | NELL |
| Catalog | Transistors, N-CHANNEL POWER MOSFET |
| Description | MOSFETs |
| Datasheet | 10N60 Datasheet |
The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have high rugged avalanche characteristics. This power MOSFET is usually used at high-speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
RDS(ON)= 0.8Ω@VGS=10V
Low gate charge ( typical 44nC)
Low CRSS( typical 18 pF)
Fast switching
100% avalanche tested
Improved DV/DT capability
| ARAMETER | SYMBOL | VALUE | UNIT | ||
| 10N60/I10N60/E10N60 | F10N60 | ||||
| Maximum Drian-Source DC Voltage | VDS | 600 | V | ||
| Maximum Gate-Drain Voltage | VGS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 10 | A | ||
| (T=100ºC) | 6.3 | A | |||
| Drain Current(Pulsed) | IDM | 40 | A | ||
| Single Pulse Avalanche Energy | EAS | 580 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 130 | 40 | W | |
| Junction Temperature | Tj | 150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
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