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MJD45H11T4G

Part No MJD45H11T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) – Single
Description TRANS PNP 80V 8A DPAK
Datasheet MJD45H11T4G Datasheet

 

 

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Product Details

  • Description

    ON Semiconductor MJD45H11T4G – Power Transistor

    The MJD45H11T4G from ON Semiconductor is a high-performance power transistor designed for a wide range of applications. This device is part of ON Semiconductor’s MJD series, known for its reliability and efficiency in power management tasks. The MJD45H11T4G is particularly suitable for linear and switching applications, making it a versatile component for designers and engineers.

    Key Features:

    • High Current Rating:Capable of handling continuous collector currents up to 8 A, this transistor can manage significant power loads, making it ideal for high-power circuits.
    • High Voltage Tolerance:With a collector-emitter voltage (VCEO) rated at 80 V, it can be used in circuits with high voltage requirements.
    • Power Dissipation:Features a power dissipation of 1.4 W, ensuring that the device can handle the thermal stresses associated with high-power applications.
    • Low Collector-Emitter Saturation Voltage:This reduces power loss and improves efficiency, which is critical in power-sensitive designs.
    • Fast Switching Speeds:The device’s fast switching capability makes it suitable for high-frequency applications, including switching regulators, inverters, and motor controls.
    • Package:Comes in a surface-mount DPAK package, which is compact and suitable for automated assembly processes, saving space on the PCB.

    Applications:

    The MJD45H11T4G is used in a variety of applications, including:

    • Power supply regulation
    • DC-DC converters
    • Motor control circuits
    • Audio amplifiers
    • Switching regulators
    • Power management in consumer and industrial electronics

    Quality and Reliability:

    ON Semiconductor is a trusted name in the semiconductor industry, and the MJD45H11T4G is built to the high standards of quality and reliability that the brand is known for. It is designed to meet the rigorous demands of modern electronic circuits, ensuring long-term performance and stability.

    Whether you are designing a new power management system or looking to upgrade an existing one, the MJD45H11T4G offers a blend of performance, efficiency, and reliability that can enhance your project.

    Products specifications

    Popularity High
    Fake Threat In the Open Market 68 pct.
    Supply and Demand Status Sufficient
    Application Field Used in Industrial, Power Management, Automotive, Signal Processing
    Alternative Parts

    (Cross-Reference)

    MJD45H11RLG;  MJD45H11G;
    Is this a common-used part? Yes
    Estimated EOL Date 2023
    Halogen Free Compliant
    Country of Origin China, Malaysia, Vietnam
    ECCN EAR99
    Introduction Date December 10, 2001
    Family Name MJD45H11
    Case / Package DPAK-3
    Mounting SMD (SMT)
    Temperature Range – Operating -55°C to 150°C (TJ)
    Frequency – Transition 90MHz
    Maximum Power Dissipation 1.75W
    Typical Gain (hFE) (Min) 40 @ 4A, 1V
    Collector Cut-off Current(Max) 1μA
    Max Vce (sat) 1V @ 400mA, 8A
    VCEO Maximum Collector-Emitter Breakdown Voltage 80V
    Maximum Current Collector 8A
    Transistor Polarity PNP
    Status Active
    Packaging Reel – TR
    Manufacturer ON Semiconductor
    Categories Discrete Semiconductor Products

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