MJD44H11T4G

Description

ON Semiconductor MJD44H11T4G – NPN Power Transistor

The MJD44H11T4G from ON Semiconductor is a robust NPN bipolar power transistor designed for general-purpose power amplification and switching applications. It is part of the MJD series, which is recognized for its high current capacity and energy efficiency, making it suitable for a wide range of electronic circuits.

Key Features

• Voltage and Current:The device supports a collector-emitter voltage (V_CEO) of 80V and a collector current (I_C) of up to 8A, making it capable of handling moderate power levels in electronic circuits.
• Power Dissipation:With a power dissipation (P_D) of 20W, the MJD44H11T4G can sustain a significant amount of energy without overheating, ensuring reliable performance in demanding situations.
• High DC Current Gain:It features a high DC current gain (h_FE), which allows for a high level of amplification, making it an ideal choice for audio amplifiers and signal processing.
• Package:Enclosed in a DPAK (TO-252) surface-mount package, the MJD44H11T4G is designed for compact PCB layouts and is suitable for automated assembly processes, offering ease of integration into various electronic systems.

Applications

The MJD44H11T4G is versatile and can be used in a variety of applications, including:

• Power regulators
• Motor controls
• Audio amplifiers
• Switching circuits
• Power management systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MJD44H11T4G is no exception. It is manufactured to meet stringent standards, ensuring high reliability and performance consistency for industrial and commercial applications.

Environmental Compliance

Adhering to environmental regulations, the MJD44H11T4G is compliant with RoHS (Restriction of Hazardous Substances), indicating that it is manufactured with a focus on environmental safety and sustainability.

Products specifications