Part No | IRF540 |
Manufacturer | STMicroelectronics |
Catalog | Transistors, MOSFET |
Description | MOSFETs |
Datasheet | IRF540 Datasheet |
Product Attribute | Attribute Value |
Manufacturer: | STMicroelectronics |
Product Category: | MOSFETs |
RoHS: | Details |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds – Drain-Source Breakdown Voltage: | 100 V |
Id – Continuous Drain Current: | 30 A |
Rds On – Drain-Source Resistance: | 77 mOhms |
Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 175 C |
Pd – Power Dissipation: | 85 W |
Channel Mode: | Enhancement |
Series: | IRF540 |
Packaging: | Tube |
Brand: | STMicroelectronics |
Configuration: | Single |
Fall Time: | 20 ns |
Forward Transconductance – Min: | 15.5 S |
Height: | 9.15 mm |
Length: | 10.4 mm |
Product Type: | MOSFETs |
Rise Time: | 45 ns |
Factory Pack Quantity: | 50 |
Subcategory: | Transistors |
Transistor Type: | 1 N-Channel |
Type: | TrenchMOS |
Typical Turn-Off Delay Time: | 50 ns |
Typical Turn-On Delay Time: | 60 ns |
Width: | 4.6 mm |
Unit Weight: | 0.068784 oz |
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