Part No | IRF520 |
Manufacturer | Vishay |
Catalog | Transistors, MOSFET |
Description | MOSFETs N-CHANNEL MOSFET |
Datasheet | IRF520 Datasheet |
Specification | Value |
---|---|
Package | TO-220-3 |
Transistor Polarity | N |
Maximum Drain Source Voltage | 100 V |
Maximum Continuous Drain Current | 7 A |
Maximum Gate Source Voltage | ±20V |
Power Dissipation | 60 W |
Number of Elements per Chip | 1 |
Maximum Forward Voltage | 100VDC |
Output Power | 60W |
Peak Non-Repetitive Surge Current | 40A |
Maximum Reverse Current | 250uA |
Channel Mode | N-Channel Enhancement |
Peak Reverse Recovery Time | 75ns |
Channel Type | N |
Repetitive Peak Reverse Voltage | 100VDC |
Configuration | Single |
Maximum Drain Source Resistance | 0.23 Ohms@10V |
Category | Power MOSFET |
Maximum Forward Current | 9.2A |
Typical Fall Time | 20ns |
Typical Gate Charge @ Vgs | 15nC@10V |
Typical Input Capacitance @ Vds | 330pf@25V |
Typical Rise Time | 50ns |
Typical Turn-Off Delay Time | 25ns |
Typical Turn-On Delay Time | 10ns |
Minimum Operating Temperature | -65°C |
Maximum Operating Temperature | 175°C |
Mounting | Through Hole |
Packaging | Bulk |
Pins | 3 |
Family | IRF5 |
Width | 4.7 mm |
Height | 8.76 mm |
Length | 10.54 mm |
Product Type | MOSFET |
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