C3M0021120K

Part No	C3M0021120K
Manufacturer	Cree/Wolfspeed
Catalog	Transistors – FETs, MOSFETs – RF
Description	SICFET N-CH 1200V 100A TO247-4L / N-Channel 1200 V 100A (Tc) 469W (Tc) Through Hole TO-247-4L
Datasheet	C3M0021120K Datasheet

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Product Details

Description

The C3M0021120K is a silicon carbide N-channel SiCFET transistor manufactured by Wolfspeed, Inc. It has a high drain to source voltage of 1200V and a maximum continuous drain current of 100A at 25°C. This component has a low fake threat in the open market of 66 percent and is ROHS3 compliant. It is suitable for various electronic applications.

Products specifications

Category	Discrete Semiconductor Products>Transistors – FETs, MOSFETs – Single
Manufacturer	Wolfspeed, Inc.
Packaging	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current – Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	28.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs	162 nC @ 15 V
Vgs (Max)	+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds	4818 pF @ 1000 V
Power Dissipation (Max)	469W (Tc)
Temperature Range – Operating	-40°C ~ 175°C (TJ)
Mounting	Through Hole
Supplier Device Package	TO-247-4L
Case / Package	TO-247-4
Base Product Number	C3M0021120
RoHS Status	ROHS3 Compliant
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Part Number	C3M0021120K,C3M0021120K
Standard Package	30