X
  • No products in the list

MMBFJ177LT1G

Part No MMBFJ177LT1G
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description JFET P-CH 30V 0.225W SOT23
Datasheet MMBFJ177LT1G Datasheet

 

Add to portfolio inquiry sheet

Product Details

Description

ON Semiconductor MMBFJ177LT1G P-Channel JFET

The MMBFJ177LT1G is a high-performance P-Channel JFET (Junction Field Effect Transistor) designed and manufactured by ON Semiconductor, a renowned leader in semiconductor solutions. This device is well-suited for a variety of applications where efficient switching and amplification are required. With its compact SOT-23 package, it is designed to meet the needs of space-constrained applications without compromising on performance.

Key Features

  • Drain-Source Voltage (VDS):The MMBFJ177LT1G can handle a drain-source voltage of up to -30V, making it suitable for various circuit designs.
  • Gate-Source Voltage (VGS):It features a gate-source voltage of -30V, providing a wide range of control in the gate terminal.
  • Continuous Drain Current (ID):This JFET can support a continuous drain current of -50 mA, ensuring reliable operation in high-demand scenarios.
  • Low On-Resistance:The device boasts a low on-resistance, which enhances its efficiency by minimizing power loss during operation.
  • High Input Impedance:With a high input impedance, the MMBFJ177LT1G ensures minimal loading on preceding circuits, making it ideal for sensitive signal processing applications.
  • Fast Switching Speed:The fast switching capabilities of this JFET make it an excellent choice for high-speed switching applications.

Applications

The versatility of the MMBFJ177LT1G allows it to be used in a wide array of applications, including but not limited to:

  • Analog Switches
  • Choppers
  • Commutators
  • Low-Noise Amplifiers
  • Audio Amplifiers
  • Sample and Hold Circuits

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products, and the MMBFJ177LT1G is no exception. It is produced with rigorous quality control standards and is designed to meet or exceed industry reliability standards. The device’s small form factor, combined with its robust performance, makes it a preferred choice for professionals and hobbyists alike.

Whether you’re designing complex industrial systems or simple audio circuits, the MMBFJ177LT1G from ON Semiconductor provides the performance and reliability needed to achieve your design goals.

Products specifications

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel – TR
Status Active
Polarity P-Channel
Voltage – Breakdown (V(BR)GSS) 30V
Current – Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V
Voltage – Cutoff (VGS off) @ Id 800mV @ 10nA
Max Input Capacitance 11pF @ 10V (VGS)
Resistance – RDS(On) 300 Ohm
Maximum Power Dissipation 225mW
Temperature Range – Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Family Name MMBFJ177L
Introduction Date July 14, 1999
ECCN EAR99
Country of Origin China, Czech Republic
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 36 pct.
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management

Manufacturers List

Related Products

MJD44H11T4G

FDS4435BZ

MJD45H11T4G

NUP2105LT1G

Weishi Innovation Logo

Contact Us

Our sales representatives will respond promptly and assist you.