| Part No | IRF7416TRPBF |
| Manufacturer | Infineon Technologies |
| Catalog | Transistors – FETs, MOSFETs – RF |
| Description | MOSFET P-CH 30V 10A 8-SOIC |
| Datasheet | IRF7416TRPBF Datasheet |
The Infineon Technologies IRF7416TRPBF is a P-Channel MOSFET, which is widely used in Discrete Semiconductor Products. It has a Drain-Source Breakdown Voltage of 30V and a Continuous Drain Current of 10A at 25°C, making it suitable for various applications. The maximum power dissipation of this MOSFET is 2.5W (Ta). It has a Gate-Source Threshold Voltage of 1V @ 250μA and a Max Gate Charge of 92nC @ 10V. The maximum Rds On at Id,Vgs is 20 mOhm @ 5.6A, 10V. This MOSFET comes in an 8-SO package and operates in a temperature range of -55°C to 150°C (TJ). It is a common-used part with high popularity and sufficient supply and demand status. The estimated EOL date is 2024.
| Categories | Discrete Semiconductor Products |
| Manufacturer | Infineon Technologies |
| Packaging | Reel – TR |
| Status | Active |
| Polarity | P-Channel |
| Technology | MOSFET |
| Drain-Source Breakdown Voltage | 30V |
| Continuous Drain Current at 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Gate-Source Threshold Voltage | 1V @ 250μA |
| Max Gate Charge | 92nC @ 10V |
| Max Input Capacitance | 1700pF @ 25V |
| Maximum Gate-Source Voltage | ±20V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Maximum Rds On at Id,Vgs | 20 mOhm @ 5.6A, 10V |
| Temperature Range – Operating | -55°C to 150°C (TJ) |
| Mounting | SMD (SMT) |
| Case / Package | 8-SO |
| Dimension | 8-SOIC (0.154″, 3.90mm Width) |
| Is this a common-used part? | Yes |
| Popularity | High |
| Fake Threat In the Open Market | 70 pct. |
| Supply and Demand Status | Sufficient |
| Family Name | IRF7416 |
| Introduction Date | June 06, 2005 |
| ECCN | EAR99 |
| Country of Origin | China |
| Halogen Free | Compliant |
| Estimated EOL Date | 2024 |
| Alternative Parts (Cross-Reference) |
TPC8106-H(T2LTIP);TPC8106-H(TE12LIBM; TPC8106-H(T2LTAMRS; |
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